Micron targets DDR6 and 400-layer NAND production for 2027
Micron says its next-generation memory roadmap is aimed at rising AI demand, with DDR6 targeting more than twice DDR5’s bandwidth and LPDDR6 35% better power efficiency than LPDDR5. The company expects its 1δ DRAM node and G11 NAND to enter volume production in the second half of 2027; it has not given launch dates for DDR6 or LPDDR6.
Bottom line — Micron’s 1δ node is expected in volume production in H2 2027, but DDR6 still has no announced launch date.
Go deeper 7
-
Micron positions DDR6 as high-reliability server memory for data centres, not as a near-term replacement for PC memory.
-
The company says LPDDR6 is being developed for data centres as well as mobile devices, and is working with Meta on future deployments.
-
Micron says 1δ should improve DRAM bit density by a mid-20% range over its predecessor.
-
Micron plans a 1TB RDIMM after recently announcing a 512GB DDR5 RDIMM.
-
G11 NAND is designed for more than 400 layers, twice G9’s bit density, 1.5 times its I/O speed and over 25% less energy per data transfer, according to Micron.
-
Micron is retaining 6F² DRAM rather than adopting 4F², citing scaling limits, manufacturing complexity and cost.
-
Micron is developing vertical HBM, which places memory directly on the compute die; the company says thermal management remains a challenge.