Infineon and rivals launch top-side cooled MOSFETs for higher power density

Infineon, Nexperia, Alpha and Omega Semiconductor (AOS), and Vishay have introduced MOSFETs with top-side cooling packages to improve thermal management and power density. The devices target applications from AI data centres to EV powertrains, where space and heat are critical constraints.

Bottom line — At least four chipmakers now offer top-side cooled MOSFETs, with Infineon claiming a 50% reduction in component count.

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• Infineon announced 750 V CoolSiC half-bridge MOSFETs in H-DPAK package, halving external power components per a company blog post.
• Nexperia's 1,200 V SiC MOSFETs in QDPAK package use a Kelvin source connection to reduce switching losses, according to a DigiKey article by Art Pini.
• AOS released 80 V AOPL66801 half-bridge MOSFET in DFN6x5 package, supporting up to 304 A on the high side, per PowerElectrTips.
• Vishay's top-side cooled PowerPAK 8x8LR package uses power clips instead of wire bonds, achieving lower temperatures at 110 A, per a Rutronik article.
• Nexperia's NSF017120T1A0HP MOSFET can dissipate up to 469 W and handle 111 A continuous current, said DigiKey.
• Infineon's H-DPAK package has a 2.3 mm height, matching QDPAK and DPAK for board-level coplanarity.

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