Samsung will use TSMC’s 3nm process for Nvidia’s custom HBM base dies
Samsung will use TSMC’s 3-nanometre process to make base dies for Nvidia’s next-generation custom high-bandwidth memory, Seoul Economic Daily reported, with Reuters relaying the report. Nvidia has asked Samsung, SK Hynix and Micron to use the same process for base dies and sixth-generation DRAM for the memory dies. The move would be Samsung and TSMC’s first collaboration at the HBM manufacturing stage.
Bottom line — Samsung is accepting Nvidia’s shared manufacturing requirements while keeping open a backup option to make the base dies itself.
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Seoul Economic Daily reports that Nvidia wants a common process across suppliers to make performance more consistent and reduce separate product validation.
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Nvidia’s NVHBM, unveiled in August, puts its custom memory controller in the base die, according to the company.
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Samsung plans to keep its in-house production model for standard HBM and custom HBM made for other customers, Seoul Economic Daily reports.
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Samsung is assessing whether its foundry could make NVHBM base dies if TSMC lacks capacity, the newspaper reports.